Author | : James D. Plummer |
Publisher | : Pearson Education India |
Total Pages | : 836 |
Release | : 2009 |
Genre | : Integrated circuits |
ISBN | : 9788131726044 |
Author | : James D. Plummer |
Publisher | : Pearson Education India |
Total Pages | : 836 |
Release | : 2009 |
Genre | : Integrated circuits |
ISBN | : 9788131726044 |
Author | : J.-P. Colinge |
Publisher | : Springer Science & Business Media |
Total Pages | : 392 |
Release | : 2004-02-29 |
Genre | : Science |
ISBN | : 9781402077739 |
Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, retraces the evolution of SOI materials, devices and circuits over a period of roughly twenty years. Twenty years of progress, research and development during which SOI material fabrication techniques have been born and abandoned, devices have been invented and forgotten, but, most importantly, twenty years during which SOI Technology has little by little proven it could outperform bulk silicon in every possible way. The turn of the century turned out to be a milestone for the semiconductor industry, as high-quality SOI wafers suddenly became available in large quantities. From then on, it took only a few years to witness the use of SOI technology in a wealth of applications ranging from audio amplifiers and wristwatches to 64-bit microprocessors. This book presents a complete and state-of-the-art review of SOI materials, devices and circuits. SOI fabrication and characterization techniques, SOI CMOS processing, and the physics of the SOI MOSFET receive an in-depth analysis. Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, also describes the properties of other SOI devices, such as multiple gate MOSFETs, dynamic threshold devices and power MOSFETs. The advantages and performance of SOI circuits used in both niche and mainstream applications are discussed in detail. The SOI specialist will find this book invaluable as a source of compiled references covering the different aspects of SOI technology. For the non-specialist, the book serves an excellent introduction to the topic with detailed, yet simple and clear explanations. Silicon-on-Insulator Technology: Materials to VLSI, Third Edition is recommended for use as a textbook for classes on semiconductor device processing and physics at the graduate level.
Author | : Stanley Wolf |
Publisher | : |
Total Pages | : 0 |
Release | : 2002 |
Genre | : Integrated circuits |
ISBN | : |
Author | : Wayne Wolf |
Publisher | : Pearson Education |
Total Pages | : 703 |
Release | : 2002-01-14 |
Genre | : Technology & Engineering |
ISBN | : 0132441845 |
For Electrical Engineering and Computer Engineering courses that cover the design and technology of very large scale integrated (VLSI) circuits and systems. May also be used as a VLSI reference for professional VLSI design engineers, VLSI design managers, and VLSI CAD engineers. Modern VSLI Design provides a comprehensive “bottom-up” guide to the design of VSLI systems, from the physical design of circuits through system architecture with focus on the latest solution for system-on-chip (SOC) design. Because VSLI system designers face a variety of challenges that include high performance, interconnect delays, low power, low cost, and fast design turnaround time, successful designers must understand the entire design process. The Third Edition also provides a much more thorough discussion of hardware description languages, with introduction to both Verilog and VHDL. For that reason, this book presents the entire VSLI design process in a single volume.
Author | : Fumio Shimura |
Publisher | : Elsevier |
Total Pages | : 435 |
Release | : 2012-12-02 |
Genre | : Technology & Engineering |
ISBN | : 0323150489 |
Semiconductor Silicon Crystal Technology provides information pertinent to silicon, which is the dominant material in the semiconductor industry. This book discusses the technology of integrated circuits (ICs) in electronic materials manufacturer. Comprised of eight chapters, this book provides an overview of the basic science, silicon materials, IC device fabrication processes, and their interaction for enhancing both the processes and materials. This text then proceeds with a discussion of the atomic structure and bonding mechanisms in order to understand the nature and formation of crystal structures, which are the fundamentals of material science. Other chapters consider the technological crystallography and classify natural crystal morphologies based on observation. The final chapter deals with the interrelationships among silicon material characteristics, circuit design, and IC fabrication in order to ensure the fabrication of very-large-scale-integration/ultra-large-scale-integration circuits. This book is a valuable resource for graduate students, physicists, engineers, materials scientists, and professionals involved in semiconductor industry.
Author | : Golla Eranna |
Publisher | : CRC Press |
Total Pages | : 432 |
Release | : 2014-12-08 |
Genre | : Science |
ISBN | : 1482232812 |
Silicon, as a single-crystal semiconductor, has sparked a revolution in the field of electronics and touched nearly every field of science and technology. Though available abundantly as silica and in various other forms in nature, silicon is difficult to separate from its chemical compounds because of its reactivity. As a solid, silicon is chemically inert and stable, but growing it as a single crystal creates many technological challenges. Crystal Growth and Evaluation of Silicon for VLSI and ULSI is one of the first books to cover the systematic growth of silicon single crystals and the complete evaluation of silicon, from sand to useful wafers for device fabrication. Written for engineers and researchers working in semiconductor fabrication industries, this practical text: Describes different techniques used to grow silicon single crystals Explains how grown single-crystal ingots become a complete silicon wafer for integrated-circuit fabrication Reviews different methods to evaluate silicon wafers to determine suitability for device applications Analyzes silicon wafers in terms of resistivity and impurity concentration mapping Examines the effect of intentional and unintentional impurities Explores the defects found in regular silicon-crystal lattice Discusses silicon wafer preparation for VLSI and ULSI processing Crystal Growth and Evaluation of Silicon for VLSI and ULSI is an essential reference for different approaches to the selection of the basic silicon-containing compound, separation of silicon as metallurgical-grade pure silicon, subsequent purification, single-crystal growth, and defects and evaluation of the deviations within the grown crystals.
Author | : Sorab Khushro Ghandhi |
Publisher | : John Wiley & Sons |
Total Pages | : 690 |
Release | : 1983 |
Genre | : Science |
ISBN | : |
Fully updated with the latest technologies, this edition covers the fundamental principles underlying fabrication processes for semiconductor devices along with integrated circuits made from silicon and gallium arsenide. Stresses fabrication criteria for such circuits as CMOS, bipolar, MOS, FET, etc. These diverse technologies are introduced separately and then consolidated into complete circuits. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Author | : Andrew Brown |
Publisher | : McGraw-Hill Companies |
Total Pages | : 467 |
Release | : 1991-01-01 |
Genre | : Technology & Engineering |
ISBN | : 9780077072216 |
Author | : Yuan Taur |
Publisher | : Cambridge University Press |
Total Pages | : 0 |
Release | : 2013-05-02 |
Genre | : Technology & Engineering |
ISBN | : 9781107635715 |
Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.